Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths
Identifieur interne : 000D01 ( Russie/Analysis ); précédent : 000D00; suivant : 000D02Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths
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Abstract
A quantum mechanical model based on the second order perturbation theory was constructed for the calculation of the free-electron absorption coefficient in nonparabolic III-V semiconductors. The implemented model allows for the calculation of the absorption changes when the free-electron gas temperature differs from the lattice temperature. Several mechanisms, which assist in the photon absorption process, were taken into account. At the considered lattice and electron temperature range and doping concentrations, the most important scattering mechanisms are impurity scattering, thermal and hot longitudinal optical phonon scattering, and finally acoustic phonon scattering. For all the interaction potentials we included the effect of screening by the conduction electrons. The model was developed in a fully consistent nonparabolic way. The electron dispersion relation as well as the interaction probabilities feature nonparabolic effects. Computations are performed for GaAs, InAs, and InSb at different mid-IR wavelengths, doping concentrations, and lattice and electron temperatures. Our nonparabolic hot-electron model is validated with experimental results available in the literature. It turns out that our model is much more accurate and consistent than other more relaxed models. The competition between different hot free-electron absorption mechanisms is discussed. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths</title><author><name sortKey="Shkerdin, G" uniqKey="Shkerdin G">G. Shkerdin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Radioengineering and Electronics of RAS, Vvedensky Square 1, R-141120 Fryazino (Moscow Region), Russia</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Radioengineering and Electronics of RAS, Vvedensky Square 1, R-141120 Fryazino (Moscow Region)</wicri:regionArea><wicri:noRegion>R-141120 Fryazino (Moscow Region)</wicri:noRegion></affiliation></author><author><name sortKey="Stiens, J" uniqKey="Stiens J">J. Stiens</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Vrije Universiteit Brussel, Laboratory for Microelectronics and Technology, Electronics Department, Pleinlaan 2, B-1050 Brussels, Belgium</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Belgique</country><wicri:regionArea>Vrije Universiteit Brussel, Laboratory for Microelectronics and Technology, Electronics Department, Pleinlaan 2, B-1050 Brussels</wicri:regionArea><wicri:noRegion>B-1050 Brussels</wicri:noRegion></affiliation></author><author><name sortKey="Vounckx, R" uniqKey="Vounckx R">R. Vounckx</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Vrije Universiteit Brussel, Laboratory for Microelectronics and Technology, Electronics Department, Pleinlaan 2, B-1050 Brussels, Belgium</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Belgique</country><wicri:regionArea>Vrije Universiteit Brussel, Laboratory for Microelectronics and Technology, Electronics Department, Pleinlaan 2, B-1050 Brussels</wicri:regionArea><wicri:noRegion>B-1050 Brussels</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0154958</idno><date when="1999-04-01">1999-04-01</date><idno type="stanalyst">PASCAL 99-0154958 AIP</idno><idno type="RBID">Pascal:99-0154958</idno><idno type="wicri:Area/Main/Corpus">015650</idno><idno type="wicri:Area/Main/Repository">014132</idno><idno type="wicri:Area/Russie/Extraction">000D01</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Electron-phonon interactions</term><term>Free electron approximation</term><term>Gallium arsenides</term><term>Hot carriers</term><term>III-V semiconductors</term><term>Impurity scattering</term><term>Indium compounds</term><term>Infrared spectra</term><term>Perturbation theory</term><term>Phonon spectra</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7830F</term><term>7820C</term><term>6320K</term><term>Etude théorique</term><term>Semiconducteur III-V</term><term>Interaction électron phonon</term><term>Théorie perturbation</term><term>Approximation électron libre</term><term>Diffusion impureté</term><term>Gallium arséniure</term><term>Indium composé</term><term>Coefficient absorption</term><term>Porteur chaud</term><term>Spectre IR</term><term>Spectre phonon</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A quantum mechanical model based on the second order perturbation theory was constructed for the calculation of the free-electron absorption coefficient in nonparabolic III-V semiconductors. The implemented model allows for the calculation of the absorption changes when the free-electron gas temperature differs from the lattice temperature. Several mechanisms, which assist in the photon absorption process, were taken into account. At the considered lattice and electron temperature range and doping concentrations, the most important scattering mechanisms are impurity scattering, thermal and hot longitudinal optical phonon scattering, and finally acoustic phonon scattering. For all the interaction potentials we included the effect of screening by the conduction electrons. The model was developed in a fully consistent nonparabolic way. The electron dispersion relation as well as the interaction probabilities feature nonparabolic effects. Computations are performed for GaAs, InAs, and InSb at different mid-IR wavelengths, doping concentrations, and lattice and electron temperatures. Our nonparabolic hot-electron model is validated with experimental results available in the literature. It turns out that our model is much more accurate and consistent than other more relaxed models. The competition between different hot free-electron absorption mechanisms is discussed. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths</s1></fA08><fA11 i1="01" i2="1"><s1>SHKERDIN (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>STIENS (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>VOUNCKX (R.)</s1></fA11><fA14 i1="01"><s1>Institute of Radioengineering and Electronics of RAS, Vvedensky Square 1, R-141120 Fryazino (Moscow Region), Russia</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Vrije Universiteit Brussel, Laboratory for Microelectronics and Technology, Electronics Department, Pleinlaan 2, B-1050 Brussels, Belgium</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>3792-3806</s1></fA20><fA21><s1>1999-04-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0154958</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A quantum mechanical model based on the second order perturbation theory was constructed for the calculation of the free-electron absorption coefficient in nonparabolic III-V semiconductors. The implemented model allows for the calculation of the absorption changes when the free-electron gas temperature differs from the lattice temperature. Several mechanisms, which assist in the photon absorption process, were taken into account. At the considered lattice and electron temperature range and doping concentrations, the most important scattering mechanisms are impurity scattering, thermal and hot longitudinal optical phonon scattering, and finally acoustic phonon scattering. For all the interaction potentials we included the effect of screening by the conduction electrons. The model was developed in a fully consistent nonparabolic way. The electron dispersion relation as well as the interaction probabilities feature nonparabolic effects. Computations are performed for GaAs, InAs, and InSb at different mid-IR wavelengths, doping concentrations, and lattice and electron temperatures. Our nonparabolic hot-electron model is validated with experimental results available in the literature. It turns out that our model is much more accurate and consistent than other more relaxed models. 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